Fig. 3
From: In Situ Coupling Applied Voltage and Synchrotron Radiation: Operando Characterization of Transistors
a X-ray scattering pattern obtained from the investigated sample before voltage was applied, X-ray peaks selected for further analysis in-plane and out-of-plane structure analysis; b scattering pattern after applied voltage c in-plane integrated intensity before and after applied voltage; d out-of-plane integrated intensity before and after applied voltages; e strain evolution along the tested transistor before and after applied voltages