Fig. 6
From: Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory
Energy band diagrams of a the selected cell for programming at TST,0 (black line) and TST,1 = 10 s (red line) and b that of the unselected cells at TST,0 (black line) and TST,1 = 0 s (red line)