Fig. 7From: Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memorya NP as a function of TST,0 after the erase operation at TST,1 = 2.5 ns. b Energy band diagrams at TST,1 = 2.5 ns and TST,0 = 2.5 ns. c NP as a function of the number of the erase disturbance pulseBack to article page