Skip to main content
Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED

Fig. 1

a The process flow of AlGaInP/GaInP MQW LED with passivation. b The current density–voltage (JV) characteristic of AlGaInP/GaInP MQW LED depending on device sizes. c The current density–light output power (JL) characteristics of 20 × 20 μm2 micro-LED comparing with the same size devices of Ref [10] d Electroluminescence of AlGaInP/GaInP MQW LED with different current density. The inset in (d) is the microscope image of 20 × 20 μm2 AlGaInP/GaInP MQW LED at 100 A/cm2

Back to article page