Fig. 12From: Influence of Device Geometry and Imperfections on the Interpretation of Transverse Magnetic Focusing ExperimentsMean free path length (\(l^{}_{\mathrm {mfp}}\)) of an electron in a device with disorder strength U calculated using Eq. 11. The lattice constant (a) and Fermi energy (\(E^{}_{\mathrm {F}}\)) were set to be 3.125 nm and 7 meV, respectively. The inset plots show the probability density for devices at a magnetic field strength of \(B^{}_{{z}}=0.089\) T, with particular realisations of disorder strengths 0.10t and 0.25t. The horizontal black dashed line at \(l^{}_{\mathrm {mfp}}=1500\) nm indicates the distance D between the injector and collector leads in the device used in Fig. 13. The vertical dashed lines correspond to the disorder strengths used in Fig. 13Back to article page