Skip to main content
Account
Fig. 12 | Nanoscale Research Letters

Fig. 12

From: Influence of Device Geometry and Imperfections on the Interpretation of Transverse Magnetic Focusing Experiments

Fig. 12

Mean free path length (\(l^{}_{\mathrm {mfp}}\)) of an electron in a device with disorder strength U calculated using Eq. 11. The lattice constant (a) and Fermi energy (\(E^{}_{\mathrm {F}}\)) were set to be 3.125 nm and 7 meV, respectively. The inset plots show the probability density for devices at a magnetic field strength of \(B^{}_{{z}}=0.089\) T, with particular realisations of disorder strengths 0.10t and 0.25t. The horizontal black dashed line at \(l^{}_{\mathrm {mfp}}=1500\) nm indicates the distance D between the injector and collector leads in the device used in Fig. 13. The vertical dashed lines correspond to the disorder strengths used in Fig. 13

Back to article page

Navigation