Defect Inspection Techniques in SiC

Table 1 Physical properties (room temperature values) of wide-bandgap semiconductors for power electronic applications in comparison with conventional semiconducting materials [10,11,12]

Property	Silicon	3C-SiC	4H-SiC	GaAs	GaN	Diamond
Bandgap energy (eV)	1.1	2.2	3.26	1.43	3.45	5.45
Breakdown field (10⁶ Vcm⁻¹)	0.3	1.3	3.2	0.4	3.0	5.7
Thermal conductivity (Wcm⁻¹ K⁻¹)	1.5	4.9	4.9	0.46	1.3	22
Saturated electron velocity (10⁷ cm s⁻¹)	1.0	2.2	2.0	1.0	2.2	2.7
Electron mobility (cm²V⁻¹ s⁻¹)	1500	1000	1140	8500	1250	2200
Melting point (°C)	1420	2830	2830	1240	2500	4000