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Table 1 Physical properties (room temperature values) of wide-bandgap semiconductors for power electronic applications in comparison with conventional semiconducting materials [10,11,12]

From: Defect Inspection Techniques in SiC

Property Silicon 3C-SiC 4H-SiC GaAs GaN Diamond
Bandgap energy (eV) 1.1 2.2 3.26 1.43 3.45 5.45
Breakdown field (106 Vcm−1) 0.3 1.3 3.2 0.4 3.0 5.7
Thermal conductivity (Wcm−1 K−1) 1.5 4.9 4.9 0.46 1.3 22
Saturated electron velocity (107 cm s−1) 1.0 2.2 2.0 1.0 2.2 2.7
Electron mobility (cm2V−1 s−1) 1500 1000 1140 8500 1250 2200
Melting point (°C) 1420 2830 2830 1240 2500 4000