Fig. 10From: Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFETReverse recovery characteristics of the ISM RC-LIGBT, SSA LIGBT and the conventional LIGBT with an anti-parallel diode: a circuit diagram for reverse recovery (LC = 1mH, LS = 1nH, RG = 25Ω, Vbus = 200 V, Von = 2 V); b reverse recovery waveforms; c electron concentration distribution along y = 4 μmBack to article page