Fig. 14From: Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFETKey process steps to fabricate the ISM LIGBT. a Bonding and grinding, b part SOI region etching, c boron implantation of P-well, d phosphorus implantation of N-buffer, e anneal, f form the gate structure and boron implantation to form P + contact, g phosphorus implantation to form N + contact, h rapid thermal anneal, i formation of electrodeBack to article page