Fig. 2From: Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFETEquivalent circuit of the ISM RC-IGBT for a FC state and b RC state. c States of the ISM under different operation states of LIGBT. Here, VPN is the built-in potential of P+/N-buffer junction, VT is the threshold voltage of the self-biased MOSBack to article page