Fig. 3
From: Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET
Current flowlines in the forward-conducting state for the ISM RC-LIGBT (LP = 0.8 μm, tOX = 50 nm, @VAK = 1 V): a NP = 5 × 1015 cm−3; b NP = 1 × 1014 cm−3
Fig. 3 | Nanoscale Research Letters