Fig. 5From: Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFETComparison of conduction characteristics for ISM, STA, SSA LIGBTs and Con. LIGBT& diode. ST is the spacing between the segmented trenches for the STA LIGBT. Lb is the distance between N-buffer and separated N + anode for the SSA LIGBT. For ISM device, NP = 1.5 × 1015 cm−3, LP = 0.8 μmBack to article page