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Table 1 Key Parameters for LIGBTs

From: Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

Parameters ISM CON SSA STA
SOI layer thickness, ts (μm) 6 6 6 6
Buried oxide thickness, tBOX (μm) 3 3 3 3
N-drift doping, Nd (× 1015 cm−3) 3.6 3.6 3.6 3.6
N-drift length, Ld (μm) 30 30 30 30
N-buffer doping, Nbuffer (× 1017 cm−3) 2 2 2 2
Doping of the N + region in the ISM (× 1018 cm−3) 1
Length of the N + region in the ISM (μm) 0.6
Spacing between trenches, ST (μm) 0.5
Distance between P + and N + anode, Lb (μm) 1 40/60 5