Table 1 Key Parameters for LIGBTs

SOI layer thickness, t_s (μm)

6

6

6

6

Buried oxide thickness, t_BOX (μm)

3

3

3

3

N-drift doping, N_d (× 10¹⁵ cm⁻³)

3.6

3.6

3.6

3.6

N-drift length, L_d (μm)

30

30

30

30

N-buffer doping, N_buffer (× 10¹⁷ cm⁻³)

2

2

2

2

Doping of the N + region in the ISM (× 10¹⁸ cm⁻³)

1

–

–

–

Length of the N + region in the ISM (μm)

0.6

–

–

–

Spacing between trenches, S_T (μm)

–

–

–

0.5

Distance between P + and N + anode, L_b (μm)

1

–

40/60

5