Fig. 3

The energy band diagram of FATFET with Fermi levels (evaluates the performance of tunneling), NC effect (induce of \(V_{{\rm fe}}\)), extracted current density or \(I_\mathrm{D}\), and difference between Fermi levels of source (\(F_{{\rm S}}(\mathrm{E})\)) and drain (\(F_{{\rm D}}(\mathrm{E})\)). Induced \(V_{{\rm fe}}\) amplifies \(V_{{\rm int}}\) and reduces the \(\lambda\); proportionally steep SS and high \(I_{{\rm D}}\) are achieved