Fig. 4

a Electron BTBT profile of devices FATFET and ATFET with high tunneling in FATFET (closer to \(p^{++}\)-n-p junctions). Plots of (b) vertical tunneling (\(p^{++}\)–p) and c lateral tunneling along the cut-lines \(\hbox{C}_2\) and \(\hbox{C}_3\) in the explored devices. Due to gradual decrease in tunneling length (as per Fig. 3), FATFET exhibits stronger vertical and lateral tunneling than ATFET