Fig. 8From: Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity AnalysesRF comparison of FATFET and ATFET in terms of a \(f_{{\rm t}}\) and b \(f_{{\rm max}}\). The benefit of \(\approx\) 0.1 V can be achieved from FATFET at the targeted maximum frequency range of ATFETBack to article page