Fig. 9From: Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity AnalysesLinearity behavior with a \(g_{m1}\), b \(g_{m2}\), and c TGF of FATFET and ATFET, respectively. Compared to ATFET, FATFET has a higher transconductance and less distortionBack to article page