Fig. 2
a, d Electroforming at 10 µA Icc and 1st RESET characteristics of multiple Au/Ti/HfAlOx/ITO and Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM devices. b, e Bipolar resistive switching properties with SET at 1 mA Icc for both devices. Inset shows the schematics of switching mechanism during SET/RESET operations. c, f Endurance behavior of both Au/Ti/HfAlOx/ITO and Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM devices with 500 and 1000 DC cycles, respectively.