Skip to main content
Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Fig. 3

a Gradual electroforming and RESET process with stepwise increment of applied bias at both polarities shows multilevel memory properties. b Quantized conductance properties of TiN-NP-based RRAM device by I‒V characteristics during DC voltage sweep RESET characteristics. c Corresponding Normalized conductance (G/G0) vs voltage curves from multiple cycles. d Histogram obtained from the G/G0 collected from multiple cycles. e Schematics of the narrowing in conductive filaments during progressively increasing of RESET voltage. f, g Increasing and decreasing of quantized conductance with negative pulse from ‒0.54 V/1 ms to ‒0.0.8 V/1 ms, and positive pulse from + 0.58 V/1 ms to + 0.84 V/1 ms.

Back to article page