Fig. 1From: Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineeringa Schematic diagram of Pt/HfO2/Al2O3/TaN memristive device. b Cross-sectional TEM image of HfO2/Al2O3/TaN structure. XPS analyses of TaOxNy interfacial layer; c Ta 4f, d N 1s, e O 1sBack to article page