Fig. 3From: Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineeringa–d Typical bipolar I–V curves, and e–h endurance performance of Pt/HfO2/Al2O3/TaN memristive devices at different current compliances of 0.5 mA, 1 mA, 3 mA, and 5 mABack to article page