Fig. 5From: Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic EngineeringNoticeable quantized changes in the conductance of Pt/HfO2/Al2O3/TaN memristive device: a I–V curves during the reset process for slow DC sweep cycles. b Conductance–voltage curves revealing the quantum conductance effect. The voltage is increased in steps of 0.005 V and delay time of 0.1 s per stepBack to article page