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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

Fig. 6

Pulse response characteristics of the Pt/HfO2/Al2O3/TaN memristive device: a current response during set and reset process under negative and positive bias pulses, respectively. b Set response time is about 270 nm and c Reset response time is about 295 ns, which are represented by red dashed lines. d Pulse endurance test. Device switched with 10 × difference in HRS and LRS and suffered no read/write disturbance after more than 105 cycles

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