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Fig. 8 | Nanoscale Research Letters

Fig. 8

From: Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

Fig. 8

Relative energy band diagrams and conduction model: a before applying electric field (zero bias), b ON state (forward bias), and c OFF state (reverse bias) of Pt/HfO2/Al2O3/TaN memristive device. Physical model of resistive switching behaviors: d pristine state, e set process (conductive filaments creation under negative bias), and f reset process (filament ruptured under positive bias) of the Pt/HfO2/Al2O3/TaN memristive devices

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