Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

Table 1 Performance comparison of HfO₂-based bilayer and trilayer memristor

Memristor structure	Forming voltage (V)	Operating voltage (V)	ON/OFF ratio	Endurance (cycles)	Retention (s)	Switching polarity	Switching mechanism	References
Pt/HfO₂/Al₂O₃/TaN	− 5.06	− 2.7/+ 1.9	~ 10⁵	1000	10⁴ s	Bipolar	ECM	This work
Ti/TiO₂/HfO₂/Si	Free	+ 10/− 6.0	~ 10²	~	10⁴ s	Bipolar	VCM	[83]
Al/AlO_x/HfO_x/Pt	~	+ 1/− 2.0	~ 103	~ 400	10⁴ s	Bipolar	VCM	[84]
Pt/HfO₂/SiO₂/TaN	− 5.0	− 1.9/+ 2.7	~ 10⁴	1000	10⁴ s	Bipolar	ECM	[52]
Pt/Al₂O₃/HfO₂/HAlfO_x/TiN	Free	− 1.0/+ 1.2	~ 10²	1000	10⁴ s	Bipolar	ECM	[11]
TaN/HfO₂/Al2O₃/HfO₂/ITO	–8.2	− 0.8/+ 1.0	~ 10	1000	10⁴ s	Bipolar	VCM	[85]