Fig. 2From: Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory ComputingMeasurement and fitting results from the fabricated GeOx ReRAM cell. a I–V curves at 1, 5, 10, and 20 sweeps. b Double logarithmic I–V characteristics in the positive-voltage HRS region. Inset shows the negative-voltage LRS region. c Endurance and d retention characteristics of the fabricated ReRAM deviceBack to article page