Fig. 4From: Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory ComputingPhysical and electrical representations of a GeOx ReRAM cell. a Three-dimensional schematic of an ReRAM cell and the conducting filaments. b Electrical circuit model considering the multiple growths of conducting filaments. c Simplest ReRAM equivalent circuitBack to article page