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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing

Fig. 5

Impedance analysis of the fabricated GeOx ReRAM device in the complex plane by a chemical impedance analyzer. Cole–Cole plots of the device in the a HRS at TE voltage = 2.3 V and b LRS at TE voltage = 0.7 V. The arrows in the figures indicate the directions of frequency sweep (counterclockwise directions) during the impedance analyses

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