Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing

Table 2 Chip-level parameters and performances computed per epoch for the GeO_x ReRAM synapse array-based PIM architecture

PIM chip parameters	Values
Chip area	62.5 mm²
Total energy on chip	3.35 × 10^–5 J
Latency	1.33 ms
Peak energy efficiency	58.92 TOPS/W
Mean energy efficiency	36.42 TOPS/W
Inference energy in the synapse array	1.64 × 10^–6 J
Other logic energy	3.55 × 10^–7 J
ADC energy	1.37 × 10^–5 J
Interconnect energy	1.20 × 10^–5 J
Inference latency in the synapse array	2.20 × 10^–5 s
Other logic latency	5.58 × 10^–4 s
ADC latency	5.86 × 10^–5 s
Interconnect latency	5.55 × 10^–4 s