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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Fig. 1

(a) Optical micrograph of monolayer h-BN (denoted as ML h-BN in the figure) transferred on GaN (Inset: Raman spectrum of monolayer h-BN grown on copper foil); (b) AFM image and corresponding height profile of monolayer h-BN; (c) Cross-sectional TEM image of the Fe/h-BN/GaN spin injection structure (Inset: FFT image of the Fe region); (d) In-plane and out-of-plane hysteresis loops of the Fe film grown on h-BN/GaN (Inset: partial enlarged hysteresis loops near the zero point)

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