Fig. 2From: High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier(a) Schematic and optical image (inset) of the three-terminal spin valve devices; (b, c, d) Hanle curves of the Fe/h-BN/GaN, Co/h-BN/GaN, and CoFeB/h-BN/GaN three-terminal spin valve devices at RT, respectivelyBack to article page