Fig. 3
From: High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier
(a) Schematic and optical image (inset) of the four-terminal spin valve devices; (b) Two-terminal I–V test at RT, where the black and red lines represent the devices with monolayer and bilayer h-BN (denoted as BL h-BN in the figure) as the tunnelling barriers, respectively; (c, d) ΔR as a function of in-plane magnetic field for the devices with monolayer and bilayer h-BN as the tunnelling barriers at RT, respectively