Fig. 4From: High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier(a) ΔR dependence on the in-plane magnetic field for the grown n-GaN with a carrier concentration of ~ 1017 cm−3; (b) ΔR dependence on the in-plane magnetic field for the free-standing single-crystal n-GaN with a carrier concentration of ~ 1018 cm−3Back to article page