Fig. 3From: Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic SystemBipolar resistive switching of Pt/Al2O3/TaN device: a deep reset, b partial reset, c process of inducing from partial reset to deep reset, and d deep and partial reset mechanism schematic diagram. Uniformity of e HRS and LRS, f set voltageBack to article page