Fig. 6From: Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic Systema Schematic illustration of similarity between human synaptic neural structure and RRAM device structure. Potentiation and depression characteristics: b consecutive same voltage pulse, c single incremental voltage pulse. d MNIST pattern recognition simulation results of (b) and (c)Back to article page