Fig. 1From: Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm SubstrateFabrication process schematic of the suspended ultrathin samples: a commercial SOI structure, b thinning of top Si film, c etching of holes on the top Si film, d removal of underneath BOX layer by undercut etching process, e 3D schematic of d, and the effectively suspended zone is enclosed by the red dashed-linesBack to article page