Fig. 2From: Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm SubstrateSEM images of (Al)GaN epi-layers on the suspended thin-film substrate with the adjacent hole spacing being a 6 \(\upmu \text{m}\), b 8 \(\upmu \text{m}\). The effectively suspended zones are indicated by the red dashed-line squares, which show intact and continuous film qualityBack to article page