Fig. 5

Bright-field cross-sectional TEM images of a suspended ultrathin sample viewed along the [1–100] zone axis with the reflections a g = [0002] and b g = [11–20]; the left half of the figures are the fully suspended zones, and right half is non-suspended area. c High-resolution TEM image around the circle zone in b, indicating the 16 nm thin Si layer between AlN and SiO\(_2\) layer. d TEM image at the plain SOI regions further away from the right side of the sample