Fig. 2
From: Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones
Cross-sectional images collected by SEM, after CM-ICP RIE of silicon in an argon plasma, a (1 min etching) and b (20 min etching), and after rat-IBE of the SiNWs, c (overetch (y)) and d (overetch (n)). The scale bars represent 200 nm. The relative height variation in the case of an overetch (y) or no overetch (n) is quantified in e where the interval plot is based on a 95% CI with N = 7