Table 1 List of settings used on the Plasma Pro system to condition the cleaning and perform the etching steps
From: Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones
Step | ICP power (W) | CCP power (W) | Pressure (mTorr) | SF6 flow (sccm) | C4F8 flow (sccm) | O2 flow (sccm) | Time (mm:ss) | Helium backside cooling pressure (Torr) |
|---|---|---|---|---|---|---|---|---|
Cleaning condition | ||||||||
Cleaning | 1200 | 20 | 22 | 0 | 0 | 100 | 15:00 | 0 |
Process conditions | ||||||||
Load | 0 | 0 | 10–4 | 0 | 0 | 0 | 03:00 | 0 |
Gas check | 0 | 0 | 18 | 9.7 | 20.3 | 0 | 00:10 | 10 |
Ignition | 1200 | 30 | 18 | 19.4 | 40.6 | 0 | 00:02 | 10 |
Process | 800 | 41 | 18 | 23 | 48 | 0 | 03:00 | 10 |
Pump down | 0 | 0 | 10–4 | 0 | 0 | 0 | 00:30 | 0 |
Unload | 0 | 0 | 10–4 | 0 | 0 | 0 | 03:00 | 0 |