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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

Fig. 2

a Transfer characteristic of GAA InAs NW FET at Vds = 0.5 V. b Change curve of drain current versus time after single pulse gate voltage of the device. The inset shows a particle enlarged view. c Schematic illustration of the mimicking of a biological synapse. d Post-synaptic current (PSC) of the device with different numbers of presynaptic spikes (1.5 V, 1 ms) at Vds = 2 V

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