Fig. 2From: Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistorsa Transfer characteristic of GAA InAs NW FET at Vds = 0.5 V. b Change curve of drain current versus time after single pulse gate voltage of the device. The inset shows a particle enlarged view. c Schematic illustration of the mimicking of a biological synapse. d Post-synaptic current (PSC) of the device with different numbers of presynaptic spikes (1.5 V, 1 ms) at Vds = 2 VBack to article page