Fig. 5From: Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect TransistorsThe PSC with different concentration of traps (1017, 1018, 1019, 1020 cm−3) in the oxide layer at Vds = 0.5 V. The amplitude and width of the gate voltage pulses are set at 2 V and 1 ms, respectivelyBack to article page