Table 1 Main parameters of a GAA InAs NW FET
From: Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
Device parameter | Value |
|---|---|
NW diameter | 20 nm |
In2O3 thickness | 3 nm |
Gate length | 0.2 μm |
Gate oxide thickness | 10 nm |
Channel doping | 1019 cm−3 |
Temperature | 300 K |
Gate work-function | 5.1 eV |