Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

Table 2 Energy consumption of various synaptic devices

Devices	Energy consumption	Synaptic type	Cycle	Ref
InAs NW FET	12.5 pJ	Depression	2 ms	This work
CMOS circuit	900 pJ	Potentiation	20 ms	[16]
Memristors	10^–9 J	Both	300 μs	[40]
Phase change memory	50 pJ	Potentiation	20 ms	[41]