Table 1 Comparison between previous artificial photoelectronic memristive synapses and this work
From: CMOS-Compatible Memristor for Optoelectronic Neuromorphic Computing
Memristor | # of conductance | Endurance | Retention time | Light source | In-sensor computing | COMS compatible | Refs. |
---|---|---|---|---|---|---|---|
Ag/ZnO/ITO | 25 | 500 | 104 s | Visible light | Yes | No | [40] |
W/MoS2/p-Si | 20 | 15 | 150 s | Ultraviolet | Yes | No | [41] |
ITO/Nb:SrTiO3/Ag | 100 | NA | 3 × 103 s | Visible light | Yes | No | [42] |
Al/TiNxO2−x/MoS2/ITO | 400 | 450 | 30 s | Visible light | Yes | No | [43] |
ITO/ZnO1−x/AlOy/Al | 30 | 1000 | 500 s | Ultraviolet | Yes | No | [44] |
ITO/HfAlO/TiN-NP/HfAlO/ITO | 100 | 175 | NA | Ultraviolet | Yes | No | [45] |
Al/TiS3/ITO | 50 | 100 | 104 s | Visible light | Yes | No | [46] |
ITO/HfO2/TiO2/ITO | 100 | 1000 | 16,300 | Visible light | Yes | Yes | This work |