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  1. Content type: Nano Express

    We describe the peculiar conditions under which optically driven gold nanoparticles (NPs) can significantly increase temperature or even melt a surrounding matrix. The heating and melting processes occur under...

    Authors: Alexander O. Govorov, Wei Zhang, Timur Skeini, Hugh Richardson, Jaebeom Lee and Nicholas A. Kotov

    Citation: Nanoscale Research Letters 2006 1:84

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  2. Content type: Nano Express

    For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy-...

    Authors: Y.H. Chen, X.L. Ye and Z.G. Wang

    Citation: Nanoscale Research Letters 2006 1:79

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  3. Content type: Nano Review

    Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth char...

    Authors: S. F. Yoon, C. Y. Liu, Z. Z. Sun and K. C. Yew

    Citation: Nanoscale Research Letters 2006 1:20

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  4. Content type: Nano Review

    In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of...

    Authors: A. P. Li and J. F. Wendelken

    Citation: Nanoscale Research Letters 2006 1:11

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  5. Content type: Nano Express

    We have studied the photoluminescence and Raman spectra of a system consisting of a polystyrene latex microsphere coated by CdTe colloidal quantum dots. The cavity-induced enhancement of the Raman scattering a...

    Authors: Nikolai Gaponik, Yury P. Rakovich, Matthias Gerlach, John F. Donegan, Diana Savateeva and Andrey L. Rogach

    Citation: Nanoscale Research Letters 2006 1:68

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  6. Content type: Nano Express

    The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface d...

    Authors: Zhiming M. Wang, Kyland Holmes, Yuriy I. Mazur, Kimberly A. Ramsey and Gregory J. Salamo

    Citation: Nanoscale Research Letters 2006 1:57

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  7. Content type: Nano Review

    Ordering phenomena related to the self-assembly of InAs quantum dots (QD) grown on GaAs(001) substrates are experimentally investigated on different length scales. On the shortest length-scale studied here, we...

    Authors: S Kiravittaya, R Songmuang, A Rastelli, H Heidemeyer and OG Schmidt

    Citation: Nanoscale Research Letters 2006 1:1

    Published on:

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