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Nanoscale Research Letters
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Page 125 of 125

  1. An atomic-force microscope assisted technique is developed to control the position and size of self-assembled semiconductor quantum dots (QDs). Presently, the site precision is as good as ± 1.5 nm and the size...

    Authors: HZ Song, T Usuki, T Ohshima, Y Sakuma, M Kawabe, Y Okada, K Takemoto, T Miyazawa, S Hirose, Y Nakata, M Takatsu and N Yokoyama

    Citation: Nanoscale Research Letters 2006 1:160

    Content type: Nano Express

    Published on:

  2. Hydroxyproline-rich glycoproteins (HRGP) comprise a super-family of extracellular structural glycoproteins whose precise roles in plant cell wall assembly and functioning remain to be elucidated. However, thei...

    Authors: Ben Wegenhart, Li Tan, Michael Held, Marcia Kieliszewski and Liwei Chen

    Citation: Nanoscale Research Letters 2006 1:154

    Content type: Nano Express

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  3. The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence m...

    Authors: V.G. Talalaev, G.E. Cirlin, A.A. Tonkikh, N.D. Zakharov, P. Werner, U. Gösele, J.W. Tomm and T. Elsaesser

    Citation: Nanoscale Research Letters 2006 1:137

    Content type: Nano Express

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  4. Metal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed ...

    Authors: Edison Z. da Silva, Frederico D. Novaes, Antônio J.R. da Silva and A. Fazzio

    Citation: Nanoscale Research Letters 2006 1:91

    Content type: Nano Review

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  6. We describe the peculiar conditions under which optically driven gold nanoparticles (NPs) can significantly increase temperature or even melt a surrounding matrix. The heating and melting processes occur under...

    Authors: Alexander O. Govorov, Wei Zhang, Timur Skeini, Hugh Richardson, Jaebeom Lee and Nicholas A. Kotov

    Citation: Nanoscale Research Letters 2006 1:84

    Content type: Nano Express

    Published on:

  7. For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy-...

    Authors: Y.H. Chen, X.L. Ye and Z.G. Wang

    Citation: Nanoscale Research Letters 2006 1:79

    Content type: Nano Express

    Published on:

  8. We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with sel...

    Authors: L. Wang, A. Rastelli, S. Kiravittaya, R. Songmuang, O.G. Schmidt, B. Krause and T.H. Metzger

    Citation: Nanoscale Research Letters 2006 1:74

    Content type: Nano Express

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  10. Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth char...

    Authors: S. F. Yoon, C. Y. Liu, Z. Z. Sun and K. C. Yew

    Citation: Nanoscale Research Letters 2006 1:20

    Content type: Nano Review

    Published on:

  11. In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of...

    Authors: A. P. Li and J. F. Wendelken

    Citation: Nanoscale Research Letters 2006 1:11

    Content type: Nano Review

    Published on:

  12. We have studied the photoluminescence and Raman spectra of a system consisting of a polystyrene latex microsphere coated by CdTe colloidal quantum dots. The cavity-induced enhancement of the Raman scattering a...

    Authors: Nikolai Gaponik, Yury P. Rakovich, Matthias Gerlach, John F. Donegan, Diana Savateeva and Andrey L. Rogach

    Citation: Nanoscale Research Letters 2006 1:68

    Content type: Nano Express

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  14. The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface d...

    Authors: Zhiming M. Wang, Kyland Holmes, Yuriy I. Mazur, Kimberly A. Ramsey and Gregory J. Salamo

    Citation: Nanoscale Research Letters 2006 1:57

    Content type: Nano Express

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  15. Ordering phenomena related to the self-assembly of InAs quantum dots (QD) grown on GaAs(001) substrates are experimentally investigated on different length scales. On the shortest length-scale studied here, we...

    Authors: S Kiravittaya, R Songmuang, A Rastelli, H Heidemeyer and OG Schmidt

    Citation: Nanoscale Research Letters 2006 1:1

    Content type: Nano Review

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  • ISSN: 1556-276X (electronic)