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Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

Abstract

The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.

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Acknowledgments

We thank Dr. John L. Shultz for his technical assistance regarding the MBE system.

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Correspondence to Zhiming M. Wang.

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Wang, Z.M., Holmes, K., Mazur, Y.I. et al. Self-organization of quantum-dot pairs by high-temperature droplet epitaxy. Nanoscale Res Lett 1, 57 (2006). https://doi.org/10.1007/s11671-006-9002-z

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Keywords

  • Quantum dots
  • Droplet epitaxy