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Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy

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Abstract

We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are aligned along the [] direction. The relative number of isolated single quantum dots (QDs) is substantially reduced by performing the growth on GaAs surfaces containing stepped mounds. Surface morphology and X-ray measurements suggest that the strain produced by InGaAs-filled nanoholes superimposed to the strain relaxation at the step edges are responsible for the improved QDM properties. QDMs are Ga-richer compared to single QDs, consistent with strain- enhanced intermixing. The high optical quality of single QDMs is probed by micro-photoluminescence spectroscopy in samples with QDM densities lower than 108 cm−2.

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Acknowledgment

This work was financially supported by SFB/TR21 and BMBF (03N8711).

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Correspondence to A. Rastelli.

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Wang, L., Rastelli, A., Kiravittaya, S. et al. Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy. Nanoscale Res Lett 1, 74 (2006) doi:10.1007/s11671-006-9003-y

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Keywords

  • Lateral quantum-dot molecules
  • Quantum dots
  • Quantum dot composition
  • Self-assembled growth