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Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots

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Ordering phenomena related to the self-assembly of InAs quantum dots (QD) grown on GaAs(001) substrates are experimentally investigated on different length scales. On the shortest length-scale studied here, we examine the QD morphology and observe two types of QD shapes, i.e., pyramids and domes. Pyramids are elongated along the [110] directions and are bounded by {137} facets, while domes have a multi-facetted shape. By changing the growth rates, we are able to control the size and size homogeneity of freestanding QDs. QDs grown by using low growth rate are characterized by larger sizes and a narrower size distribution. The homogeneity of buried QDs is measured by photoluminescence spectroscopy and can be improved by low temperature overgrowth. The overgrowth induces the formation of nanostructures on the surface. The fabrication of self-assembled nanoholes, which are used as a template to induce short-range positioning of QDs, is also investigated. The growth of closely spaced QDs (QD molecules) containing 2–6 QDs per QD molecule is discussed. Finally, the long-range positioning of self-assembled QDs, which can be achieved by the growth on patterned substrates, is demonstrated. Lateral QD replication observed during growth of three-dimensional QD crystals is reported.



  1. 1.

    Bimberg D, Grundmann M, Ledentsov NN: Quantum Dot Heterostructures. Wiley, Chichester; 1999.

  2. 2.

    Masumoto Y, Takagahara T: Semiconductor Quantum Dots: Physics, Spectroscopy and Applications. Springer, Berlin Heidelberg; 2002.

  3. 3.

    Gérard JM, Sermage B, Gayral B, Legrand B, Costard E, Thierry-Mieg V: Phys. Rev. Lett.. 1998, 81: 1110. 10.1103/PhysRevLett.81.1110

  4. 4.

    Yoshie T, Scherer A, Hendrickson J, Khitrova G, Gibbs H. M, Rupper G, Ell C, Shchekin OB, Deppe DG: Nature. 2004, 432: 2000. 10.1038/nature03119

  5. 5.

    M. Sugawara, Semiconductors and Semimetals, vol. 60, ed. by R.K. Willardson, A.C. Beer (Academic Press, London 1999)

  6. 6.

    Schmidt OG, Kiravittaya S, Nakamura Y, Heidemeyer H, Songmuang R, Müller C, Jin-Phillipp NY, Eberl K, Wawra H, Christiansen S, Gräbeldinger H, Schweizer H: Surf. Sci.. 2002, 514: 10. COI number [1:CAS:528:DC%2BD38Xls12gsLk%3D] COI number [1:CAS:528:DC%2BD38Xls12gsLk%3D] 10.1016/S0039-6028(02)01601-1

  7. 7.

    Shchukin VA, Bimberg D: Rev. Mod. Phy.. 1999, 71: 1125. COI number [1:CAS:528:DyaK1MXlvVaisbs%3D] COI number [1:CAS:528:DyaK1MXlvVaisbs%3D] 10.1103/RevModPhys.71.1125

  8. 8.

    Stangl J, Holý V, Bauer G: Rev. Mod. Phys.. 2004, 76: 725. COI number [1:CAS:528:DC%2BD2MXkslKqug%3D%3D] COI number [1:CAS:528:DC%2BD2MXkslKqug%3D%3D] 10.1103/RevModPhys.76.725

  9. 9.

    Márquez J, Geelhaar L, Jacobi K: Appl. Phys. Lett.. 2001, 78: 2309. 10.1063/1.1365101

  10. 10.

    Kaizu T, Yamaguchi K: Jpn. J. Appl. Phys.. 2003, 42: 4166. COI number [1:CAS:528:DC%2BD3sXlsVOis7k%3D] COI number [1:CAS:528:DC%2BD3sXlsVOis7k%3D] 10.1143/JJAP.42.4166

  11. 11.

    Ruvimov S, Werner P, Scheerschmidt K, Gösele U, Heydenreich J, Richter U, Ledentsov NN, Grundmann M, Bimberg D, Ustinov VM, Egorov AY, Kop’ev PS, Alferov ZhI: Phys. Rev. B. 1995, 51: 14766. COI number [1:CAS:528:DyaK2MXmtVKhs7o%3D] COI number [1:CAS:528:DyaK2MXmtVKhs7o%3D] 10.1103/PhysRevB.51.14766

  12. 12.

    Costantini G, Manzano C, Songmuang R, Schmidt OG, Kern K: Appl. Phys. Lett.. 2003, 82: 3194. COI number [1:CAS:528:DC%2BD3sXjs1Gksr0%3D] COI number [1:CAS:528:DC%2BD3sXjs1Gksr0%3D] 10.1063/1.1572534

  13. 13.

    Costantini G, Rastelli A, Manzano C, Songmuang R, Schmidt OG, Kern K, von Känel H: Appl. Phys. Lett.. 2004, 85: 5673. COI number [1:CAS:528:DC%2BD2cXhtVKqsLnO] COI number [1:CAS:528:DC%2BD2cXhtVKqsLnO] 10.1063/1.1829164

  14. 14.

    Costantini G, Rastelli A, Manzano C, Acosta-Diaz P, Katsaros G, Songmuang R, Schmidt OG, von Känel H, Kern K: J. Cryst. Growth. 2005, 278: 38. COI number [1:CAS:528:DC%2BD2MXjsVeltL4%3D] COI number [1:CAS:528:DC%2BD2MXjsVeltL4%3D] 10.1016/j.jcrysgro.2004.12.047

  15. 15.

    A. Rastelli, H. von Ka¨ nel, Surf. Sci. 532–535, 769 (2003)

  16. 16.

    Mukhametzhanov I, Wei Z, Heitz R, Madhukar A: Appl. Phys. Lett.. 1999, 75: 85. COI number [1:CAS:528:DyaK1MXktVSit78%3D] COI number [1:CAS:528:DyaK1MXktVSit78%3D] 10.1063/1.124284

  17. 17.

    Medeiros-Ribeiro G, Bratkovski AM, Kamins TI, Ohlberg DAA, Williams RS: Science. 1998, 279: 353. COI number [1:CAS:528:DyaK1cXmtlOiuw%3D%3D] COI number [1:CAS:528:DyaK1cXmtlOiuw%3D%3D] 10.1126/science.279.5349.353

  18. 18.

    Leonard D, Krishnamurthy M, Reaves CM, Denbaars SP, Petroff PM: Appl. Phys. Lett.. 1993, 63: 3203. COI number [1:CAS:528:DyaK2cXht1WrtbY%3D] COI number [1:CAS:528:DyaK2cXht1WrtbY%3D] 10.1063/1.110199

  19. 19.

    Songmuang R, Kiravittaya S, Sawadsaringkarn M, Panyakeow S, Schmidt OG: J. Cryst. Growth. 2003, 251: 166. COI number [1:CAS:528:DC%2BD3sXitlWmu7c%3D] COI number [1:CAS:528:DC%2BD3sXitlWmu7c%3D] 10.1016/S0022-0248(02)02474-0

  20. 20.

    Nakata Y, Mukai K, Sugawara M, Ohtsubo K, Ishikawa H, Yokoyama N: J. Cryst. Growth. 2000, 208: 93. COI number [1:CAS:528:DyaK1MXotVKls78%3D] COI number [1:CAS:528:DyaK1MXotVKls78%3D] 10.1016/S0022-0248(99)00466-2

  21. 21.

    Chen Y, Washburn J: Phys. Rev. Lett.. 1996, 77: 4046. COI number [1:CAS:528:DyaK28XmvVKiurw%3D] COI number [1:CAS:528:DyaK28XmvVKiurw%3D] 10.1103/PhysRevLett.77.4046

  22. 22.

    Kiravittaya S, Nakamura Y, Schmidt OG: Physica E. 2002, 13: 224. COI number [1:CAS:528:DC%2BD38XksFOitLc%3D] COI number [1:CAS:528:DC%2BD38XksFOitLc%3D] 10.1016/S1386-9477(01)00525-2

  23. 23.

    Songmuang R, Kiravittaya S, Schmidt OG: J. Cryst. Growth. 2003, 249: 416. COI number [1:CAS:528:DC%2BD3sXpsFSnsg%3D%3D] COI number [1:CAS:528:DC%2BD3sXpsFSnsg%3D%3D] 10.1016/S0022-0248(02)02222-4

  24. 24.

    Rastelli A, Müller E, von Känel H: Appl. Phys. Lett.. 2002, 80: 1438. COI number [1:CAS:528:DC%2BD38XhsVCntbs%3D] COI number [1:CAS:528:DC%2BD38XhsVCntbs%3D] 10.1063/1.1453476

  25. 25.

    Nishi K, Saito H, Sugou S, Lee J-S: Appl. Phys. Lett.. 1999, 74: 1111. COI number [1:CAS:528:DyaK1MXhtF2ht7Y%3D] COI number [1:CAS:528:DyaK1MXhtF2ht7Y%3D] 10.1063/1.123459

  26. 26.

    Shiraishi K: Appl. Phys. Lett.. 1992, 60: 1363. COI number [1:CAS:528:DyaK38XhvVWqu7g%3D] COI number [1:CAS:528:DyaK38XhvVWqu7g%3D] 10.1063/1.107292

  27. 27.

    Xie Q, Chen P, Madhukar A: Appl. Phys. Lett.. 1994, 65: 2051. COI number [1:CAS:528:DyaK2cXntFejurc%3D] COI number [1:CAS:528:DyaK2cXntFejurc%3D] 10.1063/1.112790

  28. 28.

    Burkard G, Seelig G, Loss D: Phys. Rev. B. 2000, 62: 1581. 10.1103/PhysRevB.62.2581

  29. 29.

    Stievater TH, Li X, Steel DG, Gammon D, Katzer DS, Park D, Piermarocchi C, Sham LJ: Phys. Rev. Lett.. 2001, 87: 133603. COI number [1:STN:280:DC%2BD3MrjtlOrug%3D%3D] COI number [1:STN:280:DC%2BD3MrjtlOrug%3D%3D] 10.1103/PhysRevLett.87.133603

  30. 30.

    Zrenner A, Beham E, Stufler S, Findeis F, Bichler M, Abstreiter G: Nature. 2002, 418: 612. COI number [1:CAS:528:DC%2BD38XlvVyltL4%3D] COI number [1:CAS:528:DC%2BD38XlvVyltL4%3D] 10.1038/nature00912

  31. 31.

    Li X, Wu Y, Steel D, Gammon D, Stievater TH, Katzer DS, Park D, Piermarocchi C, Sham LJ: Science. 2003, 301: 809. COI number [1:CAS:528:DC%2BD3sXmtVGqsrc%3D] COI number [1:CAS:528:DC%2BD3sXmtVGqsrc%3D] 10.1126/science.1083800

  32. 32.

    Xie Q, Madhukar A, Chen P, Kobayashi NP: Phys. Rev. Lett.. 1995, 75: 2542. COI number [1:CAS:528:DyaK2MXot1Oht7Y%3D] COI number [1:CAS:528:DyaK2MXot1Oht7Y%3D] 10.1103/PhysRevLett.75.2542

  33. 33.

    Schuler H, Jin-Phillipp NY, Phillipp F, Eberl K: Semicond. Sci. Technol.. 1998, 13: 1341. COI number [1:CAS:528:DyaK1cXnsVWjsbw%3D] COI number [1:CAS:528:DyaK1cXnsVWjsbw%3D] 10.1088/0268-1242/13/11/001

  34. 34.

    Kiravittaya S, Songmuang R, Schmidt OG: J. Cryst. Growth. 2003, 251: 258. COI number [1:CAS:528:DC%2BD3sXitlWls7g%3D] COI number [1:CAS:528:DC%2BD3sXitlWls7g%3D] 10.1016/S0022-0248(02)02475-2

  35. 35.

    L. Wang, A. Rastelli, S. Kiravittaya, R. Songmuang, O.G. Schmidt, B. Krause, T.H. Metzger, Nanoscale Res. Lett.(in press)

  36. 36.

    Penev E, Stojković S, Kratzer P, Scheffler M: Phys. Rev. B. 2004, 69: 115335. 10.1103/PhysRevB.69.115335

  37. 37.

    Schmidt OG, Deneke Ch, Kiravittaya S, Songmuang R, Heidemeyer H, Nakamura Y, Zapf-Gottwick R, Müller C, Jin-Phillipp NY: IEEE J. Sel. Top. Quantum Electron.. 2002, 8: 1025. COI number [1:CAS:528:DC%2BD38XpsVOgtb0%3D] COI number [1:CAS:528:DC%2BD38XpsVOgtb0%3D] 10.1109/JSTQE.2002.804235

  38. 38.

    Songmuang R, Kiravittaya S, Schmidt OG: Appl. Phys. Lett.. 2003, 82: 2892. COI number [1:CAS:528:DC%2BD3sXjtlSisrw%3D] COI number [1:CAS:528:DC%2BD3sXjtlSisrw%3D] 10.1063/1.1569992

  39. 39.

    Kiravittya S, Heidemeyer H, Schmidt OG: Physica E. 2004, 23: 253. 10.1016/j.physe.2003.10.013

  40. 40.

    Heidemeyer H, Müller C, Schmidt OG: J. Cryst. Growth. 2004, 261: 444. COI number [1:CAS:528:DC%2BD2cXisFOrtw%3D%3D] COI number [1:CAS:528:DC%2BD2cXisFOrtw%3D%3D] 10.1016/j.jcrysgro.2003.09.030

  41. 41.

    Kiravittaya S, Schmidt OG: Appl. Phys. Lett.. 2005, 86: 206101. 10.1063/1.1925771

  42. 42.

    Kiravittaya S, Heidemeyer H, Schmidt OG: Appl. Phys. Lett.. 2005, 86: 263113. 10.1063/1.1954874

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The technical support of U. Waizmann, T. Reindl, and M. Riek is acknowledged. The authors would like to thank K. von Klitzing for continuous interest and support. This work was financially supported by the Bundesministerium für Bildung und Forschung (contract number: 03N8711).

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Correspondence to S Kiravittaya.

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Kiravittaya, S., Songmuang, R., Rastelli, A. et al. Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots. Nanoscale Res Lett 1, 1 (2006).

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  • Self-assembly
  • Semiconductor quantum dots
  • Photoluminescence