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Electrically tunable solid-state silicon nanopore ion filter


We show that a nanopore in a silicon membrane connected to a voltage source can be used as an electrically tunable ion filter. By applying a voltage between the heavily doped semiconductor and the electrolyte, it is possible to invert the ion population inside the nanopore and vary the conductance for both cations and anions in order to achieve selective conduction of ions even in the presence of significant surface charges in the membrane. Our model based on the solution of the Poisson equation and linear transport theory indicates that in narrow nanopores substantial gain can be achieved by controlling electrically the width of the charge double layer.



  1. 1.

    Hodgson AL, Huxley AF, Katz B: J. Physiol.. 1952, 116: 424.

    Article  Google Scholar 

  2. 2.

    Doyle DA, Cabral JM, Ofuetzner RA, Kuo A, Gulbis JM, Cohen SL, Chait BT, MacKinnon R: Science. 1998, 280: 69. COI number [1:CAS:528:DyaK1cXitlWksrY%3D] 10.1126/science.280.5360.69

    Article  Google Scholar 

  3. 3.

    Li J, Gershow M, Stein D, Brandin E, Golovchenko JA: Nat Mater. 2003, 2: 611. COI number [1:CAS:528:DC%2BD3sXmvVCrsb8%3D] 10.1038/nmat965

    Article  Google Scholar 

  4. 4.

    Ho C, Qiao R, Heng JB, Chatterjee A, Timp RJ, Aluru NR, Timp G: Proc. Natl. Acad. Sci.. 2005, 102: 10445. COI number [1:CAS:528:DC%2BD2MXntVSit7s%3D] 10.1073/pnas.0500796102

    Article  Google Scholar 

  5. 5.

    Heng JB, Ho C, Kim T, Timp R, Aksimentiev A, Grinkova YV, Sligar S, Sprosch T, Schulten K, Timp G: Biophys. J.. 2004, 87: 2905. COI number [1:CAS:528:DC%2BD2cXot12mtrc%3D] 10.1529/biophysj.104.041814

    Article  Google Scholar 

  6. 6.

    Gracheva ME, Xiong A, Leburton JP, Aksimentiev A, Schulten K, Timp G: Nanotechnology. 2006, 17: 622. COI number [1:CAS:528:DC%2BD28Xis1yhsrs%3D] 10.1088/0957-4484/17/3/002

    Article  Google Scholar 

  7. 7.

    Nishizawa M, Martin CR, Menon VP: Science. 1995, 268: 700. COI number [1:CAS:528:DyaK2MXlsVGisbk%3D] 10.1126/science.268.5211.700

    Article  Google Scholar 

  8. 8.

    Daiguji H, Oka Y, Shirono K: Nano Lett.. 2005, 5: 2274. COI number [1:CAS:528:DC%2BD2MXhtVGqsL%2FF] 10.1021/nl051646y

    Article  Google Scholar 

  9. 9.

    Fan R, Yue M, Karnik R, Majumdar A, Yang P: Phys. Rev. Lett.. 2005, 95: 086607. 10.1103/PhysRevLett.95.086607

    Article  Google Scholar 

  10. 10.

    Siwy ZS, Powell MR, Petrov A, Kalman E, Trautmann C, Eisenberg RS: Nano Lett.. 2006, 6: 1729. COI number [1:CAS:528:DC%2BD28XntVWrtr8%3D] 10.1021/nl061114x

    Article  Google Scholar 

  11. 11.

    Siwy ZS: Adv. Funct. Mater.. 2006, 16: 735. COI number [1:CAS:528:DC%2BD28XjvVCmurk%3D] 10.1002/adfm.200500471

    Article  Google Scholar 

  12. 12.

    Li H, Zheng Y, Akin D, Bashir R: J. Microelectromech. Syst.. 2005, 14: 103. COI number [1:CAS:528:DC%2BD2MXhtFWrsb3E] 10.1109/JMEMS.2004.839124

    Article  Google Scholar 

  13. 13.

    Kralj JG, Lis MTW, Schmidt MA, Jensen KF: Anal. Chem.. 2006, 78: 5019. COI number [1:CAS:528:DC%2BD28XlvFWnu7w%3D] 10.1021/ac0601314

    Article  Google Scholar 

  14. 14.

    Li J, Stein D, McMullan C, Branton D, Aziz MJ, Golovchenko JA: Nature. 2001, 412: 166. COI number [1:CAS:528:DC%2BD3MXlsFWms7o%3D] 10.1038/35084037

    Article  Google Scholar 

  15. 15.

    Stein D, Li J, Golovchenko JA: Phys. Rev. Lett.. 2002, 89: 276106. 10.1103/PhysRevLett.89.276106

    Article  Google Scholar 

  16. 16.

    Storm AJ, Chen JH, Ling XS, Zandbergen HW, Dekker C: Nat. Mater.. 2003, 8: 537. 10.1038/nmat941

    Article  Google Scholar 

  17. 17.

    Gardner CL, Nonner W, Eisenberg RS: J. Comput. Electron.. 2004, 3: 25. COI number [1:CAS:528:DC%2BD2cXntlOkurc%3D] 10.1023/B:JCEL.0000029453.09980.fb

    Article  Google Scholar 

  18. 18.

    S.M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, 1981)

    Google Scholar 

  19. 19.

    R.S. Muller, T.I. Kamins, M. Chan, Device Electronics for Integrated Circuits (John Wiley and sons Inc., 2003)

    Google Scholar 

  20. 20.

    Zhou JD, Cui ST, Cochran HD: Mol. Phys.. 2003, 101: 1089. COI number [1:CAS:528:DC%2BD3sXjtlSms7k%3D] 10.1080/0026897031000068479

    Article  Google Scholar 

  21. 21.

    Lynden-Bell RM, Rasaiah J: J. Chem. Phys.. 1996, 105: 9266. COI number [1:CAS:528:DyaK28XntF2ns7g%3D] 10.1063/1.472757

    Article  Google Scholar 

  22. 22.

    Heng JB, Aksimentiev A, Ho C, Marks P, Grinkova YV, Sligar S, Schulten K, Timp G: Biophys. J.. 2006, 90: 1098. COI number [1:CAS:528:DC%2BD28XhtFGhsbg%3D] 10.1529/biophysj.105.070672

    Article  Google Scholar 

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This work was supported by the NIRT-NSF Grant No. CCR 02-10843 and the NIH Grant PHS1-R01-HG003713A.

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Correspondence to Jean-Pierre Leburton.

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Vidal, J., Gracheva, M.E. & Leburton, JP. Electrically tunable solid-state silicon nanopore ion filter. Nanoscale Res Lett 2, 61 (2007).

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  • Ion channels
  • Artificial nanopore
  • Silicon materials
  • Nanofluidics