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Electrically tunable solid-state silicon nanopore ion filter

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We show that a nanopore in a silicon membrane connected to a voltage source can be used as an electrically tunable ion filter. By applying a voltage between the heavily doped semiconductor and the electrolyte, it is possible to invert the ion population inside the nanopore and vary the conductance for both cations and anions in order to achieve selective conduction of ions even in the presence of significant surface charges in the membrane. Our model based on the solution of the Poisson equation and linear transport theory indicates that in narrow nanopores substantial gain can be achieved by controlling electrically the width of the charge double layer.



  1. 1.

    Hodgson AL, Huxley AF, Katz B: J. Physiol.. 1952, 116: 424.

  2. 2.

    Doyle DA, Cabral JM, Ofuetzner RA, Kuo A, Gulbis JM, Cohen SL, Chait BT, MacKinnon R: Science. 1998, 280: 69. COI number [1:CAS:528:DyaK1cXitlWksrY%3D] 10.1126/science.280.5360.69

  3. 3.

    Li J, Gershow M, Stein D, Brandin E, Golovchenko JA: Nat Mater. 2003, 2: 611. COI number [1:CAS:528:DC%2BD3sXmvVCrsb8%3D] 10.1038/nmat965

  4. 4.

    Ho C, Qiao R, Heng JB, Chatterjee A, Timp RJ, Aluru NR, Timp G: Proc. Natl. Acad. Sci.. 2005, 102: 10445. COI number [1:CAS:528:DC%2BD2MXntVSit7s%3D] 10.1073/pnas.0500796102

  5. 5.

    Heng JB, Ho C, Kim T, Timp R, Aksimentiev A, Grinkova YV, Sligar S, Sprosch T, Schulten K, Timp G: Biophys. J.. 2004, 87: 2905. COI number [1:CAS:528:DC%2BD2cXot12mtrc%3D] 10.1529/biophysj.104.041814

  6. 6.

    Gracheva ME, Xiong A, Leburton JP, Aksimentiev A, Schulten K, Timp G: Nanotechnology. 2006, 17: 622. COI number [1:CAS:528:DC%2BD28Xis1yhsrs%3D] 10.1088/0957-4484/17/3/002

  7. 7.

    Nishizawa M, Martin CR, Menon VP: Science. 1995, 268: 700. COI number [1:CAS:528:DyaK2MXlsVGisbk%3D] 10.1126/science.268.5211.700

  8. 8.

    Daiguji H, Oka Y, Shirono K: Nano Lett.. 2005, 5: 2274. COI number [1:CAS:528:DC%2BD2MXhtVGqsL%2FF] 10.1021/nl051646y

  9. 9.

    Fan R, Yue M, Karnik R, Majumdar A, Yang P: Phys. Rev. Lett.. 2005, 95: 086607. 10.1103/PhysRevLett.95.086607

  10. 10.

    Siwy ZS, Powell MR, Petrov A, Kalman E, Trautmann C, Eisenberg RS: Nano Lett.. 2006, 6: 1729. COI number [1:CAS:528:DC%2BD28XntVWrtr8%3D] 10.1021/nl061114x

  11. 11.

    Siwy ZS: Adv. Funct. Mater.. 2006, 16: 735. COI number [1:CAS:528:DC%2BD28XjvVCmurk%3D] 10.1002/adfm.200500471

  12. 12.

    Li H, Zheng Y, Akin D, Bashir R: J. Microelectromech. Syst.. 2005, 14: 103. COI number [1:CAS:528:DC%2BD2MXhtFWrsb3E] 10.1109/JMEMS.2004.839124

  13. 13.

    Kralj JG, Lis MTW, Schmidt MA, Jensen KF: Anal. Chem.. 2006, 78: 5019. COI number [1:CAS:528:DC%2BD28XlvFWnu7w%3D] 10.1021/ac0601314

  14. 14.

    Li J, Stein D, McMullan C, Branton D, Aziz MJ, Golovchenko JA: Nature. 2001, 412: 166. COI number [1:CAS:528:DC%2BD3MXlsFWms7o%3D] 10.1038/35084037

  15. 15.

    Stein D, Li J, Golovchenko JA: Phys. Rev. Lett.. 2002, 89: 276106. 10.1103/PhysRevLett.89.276106

  16. 16.

    Storm AJ, Chen JH, Ling XS, Zandbergen HW, Dekker C: Nat. Mater.. 2003, 8: 537. 10.1038/nmat941

  17. 17.

    Gardner CL, Nonner W, Eisenberg RS: J. Comput. Electron.. 2004, 3: 25. COI number [1:CAS:528:DC%2BD2cXntlOkurc%3D] 10.1023/B:JCEL.0000029453.09980.fb

  18. 18.

    S.M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, 1981)

  19. 19.

    R.S. Muller, T.I. Kamins, M. Chan, Device Electronics for Integrated Circuits (John Wiley and sons Inc., 2003)

  20. 20.

    Zhou JD, Cui ST, Cochran HD: Mol. Phys.. 2003, 101: 1089. COI number [1:CAS:528:DC%2BD3sXjtlSms7k%3D] 10.1080/0026897031000068479

  21. 21.

    Lynden-Bell RM, Rasaiah J: J. Chem. Phys.. 1996, 105: 9266. COI number [1:CAS:528:DyaK28XntF2ns7g%3D] 10.1063/1.472757

  22. 22.

    Heng JB, Aksimentiev A, Ho C, Marks P, Grinkova YV, Sligar S, Schulten K, Timp G: Biophys. J.. 2006, 90: 1098. COI number [1:CAS:528:DC%2BD28XhtFGhsbg%3D] 10.1529/biophysj.105.070672

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This work was supported by the NIRT-NSF Grant No. CCR 02-10843 and the NIH Grant PHS1-R01-HG003713A.

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Correspondence to Jean-Pierre Leburton.

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Vidal, J., Gracheva, M.E. & Leburton, J. Electrically tunable solid-state silicon nanopore ion filter. Nanoscale Res Lett 2, 61 (2007) doi:10.1007/s11671-006-9031-7

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  • Ion channels
  • Artificial nanopore
  • Silicon materials
  • Nanofluidics